Anisotropic transport of electrons and holes in thin GaAs/AlAs quantum wells grown on (311)A GaAs substratesNODA, Takeshi; SAKAKI, Hiroyuki.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 6, pp 2116-2118, issn 1386-9477, 3 p.Conference Paper

Anisotropic Diffusion of In Atoms from an In Droplet and Formation of Elliptically Shaped InAs Quantum Dot Clusters on (100) GaAsNODA, Takeshi; MANO, Takaaki; SAKAKI, Hiroyuki et al.Crystal growth & design. 2011, Vol 11, Num 3, pp 726-728, issn 1528-7483, 3 p.Article

Transport properties of double-gate SiO₂-Si-SiO₂quantum wellPRUNNILA, Mika; AHOPELTO, Jouni; SAKAKI, Hiroyuki et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 6, pp 970-976, issn 0031-8965, 7 p.Conference Paper

Reduced phonon scattering in an asymmetric triple barrier resonant-tunneling diode at high magnetic fieldsSTRUTZ, Thomas; TAKAMASU, Tadashi; SAKAKI, Hiroyuki et al.Journal of the Physical Society of Japan. 2006, Vol 75, Num 11, issn 0031-9015, 114702.1-114702.5Article

Two different growth modes of GaSb dots on GaAs( 10 0) by droplet epitaxyKAWAZU, Takuya; MANO, Takaaki; NODA, Takeshi et al.Journal of crystal growth. 2009, Vol 311, Num 8, pp 2255-2257, issn 0022-0248, 3 p.Article

Controlling anisotropy of GaSb(As)/GaAs quantum dots by self- assembled molecular beam epitaxyCHAO JIANG; SAKAKI, Hiroyuki.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 17-20, issn 1386-9477, 4 p.Conference Paper

Possible generation of electric multipole radiation from solid state quantum ringsKONDO, Naoki; KOBAYASHI, Shigeki; SAKAKI, Hiroyuki et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 49-52, issn 1386-9477, 4 p.Conference Paper

Landau levels in a novel two-dimensional electron system interacting with charged quantum dotsKAWAZU, Takuya; TORII, Kousuke; SAKAKI, Hiroyuki et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 226-229, issn 1386-9477, 4 p.Conference Paper

Molecular beam epitaxy of self-assembled GaSb-based quantum dot structures for the control of photoluminescence wavelengths towards 1.3 μm rangeCHAO JIANG; KOBAYASHI, Shigeki; SAKAKI, Hiroyuki et al.International Conference on Indium Phosphide and Related Materials. 2004, pp 454-457, isbn 0-7803-8595-0, 1Vol, 4 p.Conference Paper

Growth of GaSb dots on GaAs(100) by droplet epitaxyKAWAZU, Takuya; MANO, Takaaki; NODA, Takeshi et al.Physica status solidi. B. Basic research. 2009, Vol 246, Num 4, pp 733-735, issn 0370-1972, 3 p.Article

Growth of GaSb quantum dots on GaAs (311)AKAWAZU, Takuya; NODA, Takeshi; MANO, Takaaki et al.Journal of crystal growth. 2013, Vol 378, pp 475-479, issn 0022-0248, 5 p.Conference Paper

Redistribution of photogenerated carriers in neutral and charged InAs quantum dot systemsTORII, Kousuke; OHMORI, Masato; KAWAZU, Takuya et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 175-178, issn 1386-9477, 4 p.Conference Paper

Sb/As intermixing in self-assembled GaSb/GaAs type II quantum dot systems and control of their photoluminescence spectraJIANG, Chao; SAKAKI, Hiroyuki.Physica. E, low-dimentional systems and nanostructures. 2005, Vol 26, Num 1-4, pp 180-184, issn 1386-9477, 5 p.Conference Paper

g-factor of two-dimensional electrons in selectively doped n-AlGaAs/GaAs heterojunctions with embedded InGaAs quantum dotsKAWAZU, Takuya; SAKAKI, Hiroyuki.Journal of crystal growth. 2007, Vol 301-302, pp 910-913, issn 0022-0248, 4 p.Conference Paper

Scattering of two-dimensional electrons by self-assembled InAlAs anti-dots in novel n-AlGaAs/GaAs heterojunctionsKAWAZU, Takuya; SAKAKI, Hiroyuki.Physica. E, low-dimentional systems and nanostructures. 2007, Vol 40, Num 2, pp 233-236, issn 1386-9477, 4 p.Conference Paper

Progress and prospects of advanced quantum nanostructures and roles of molecular beam epitaxySAKAKI, Hiroyuki.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 9-16, issn 0022-0248, 8 p.Conference Paper

Molecular beam epitaxial growth of very large lateral anisotropic GaSb/GaAs quantum dotsCHAO JIANG; KAWAZU, Takuya; KOBAYASHI, Shigeki et al.Journal of crystal growth. 2007, Vol 301-302, pp 828-832, issn 0022-0248, 5 p.Conference Paper

Quantitative study of exciton-exciton interaction in a GaAs microcavityRAMKUMAR, Chari; AOKI, Takao; SHIMANO, Ryo et al.Journal of the Physical Society of Japan. 2000, Vol 69, Num 8, pp 2439-2442, issn 0031-9015Article